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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ103AU
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.
QUICK REFERENCE DATA
SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat hFEsat tf PARAMETER Collector-emitter voltage peak value Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage D.C. current gain Fall time CONDITIONS VBE = 0 V TYP. 0.25 12.5 46 MAX. 700 700 400 4 8 50 1.0 60 UNIT V V V A A W V ns
Tmb 25 C IC = 3.0 A;IB = 0.6 A IC = 3.0 A; VCE = 5 V IC = 2.5 A; IB1= 0.4 A
PINNING - SOT533
PIN 1 2 3 tab base collector emitter collector DESCRIPTION
PIN CONFIGURATION
SYMBOL
c b
1 Top view 2 3
MBK915
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO VCBO IC ICM IB IBM Ptot Tstg Tj PARAMETER Collector to emitter voltage Collector to emitter voltage (open base) Collector to base voltage (open emitter) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 700 400 700 4 8 2 4 50 150 150 UNIT V V V A A A A W C C
Tmb 25 C
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER Junction to mounting base Junction to ambient in free air CONDITIONS TYP. 70 MAX. 2.5 UNIT K/W K/W
October 1999
1
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ103AU
STATIC CHARACTERISTICS
Tmb = 25 C unless otherwise specified SYMBOL ICES,ICBO ICES ICEO IEBO VCEOsust VCEsat VBEsat hFE hFE hFEsat PARAMETER Collector cut-off current 1 Collector cut-off current 1 Emitter cut-off current Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain CONDITIONS VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 C VCEO = VCEOMmax (400V) VEB = 7 V; IC = 0 A IB = 0 A; IC = 10 mA; L = 25 mH IC = 3.0 A; IB = 0.6 A IC = 3.0 A; IB = 0.6 A IC = 1 mA; VCE = 5 V IC = 500mA; VCE = 5 V IC = 2.0 A; VCE = 5 V IC = 3.0 A; VCE = 5 V MIN. 400 10 13 11 TYP. 0.25 0.97 17 22 16 12.5 MAX. 0.1 0.5 0.1 0.1 1.0 1.5 32 32 22 UNIT mA mA mA mA V V V
DYNAMIC CHARACTERISTICS
Tmb = 25 C unless otherwise specified SYMBOL PARAMETER Switching times (resistive load) ton ts tf Turn-on time Turn-off storage time Turn-off fall time Switching times (inductive load) ts tf Turn-off storage time Turn-off fall time Switching times (inductive load) ts tf Turn-off storage time Turn-off fall time CONDITIONS ICon = 2.5 A; IBon = -IBoff = 0.5 A; RL = 75 ohms; VBB2 = 4V; TYP. MAX. UNIT s s s s ns s ns
0.48 2.7 0.27
0.6 3.3 0.35
ICon = 2.5 A; IBon = 0.5 A; LB = 1 H; -VBB = 5 V ICon = 2.5 A; IBon = 0.5 A; LB = 1 H; -VBB = 5 V; Tj = 100 C
1.2 46
1.4 60
1.34 98
1.8 200
1 Measured with half sine-wave voltage (curve tracer).
October 1999
2
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ103AU
+ 50v 100-200R
IC
90 %
ICon
90 %
10 %
Horizontal Oscilloscope Vertical 300R 30-60 Hz 6V 1R
IB
ts ton toff IBon 10 % tr 30ns -IBoff
tf
Fig.1. Test circuit for VCEOsust.
Fig.4. Switching times waveforms with resistive load.
IC / mA
VCC
250
LC
IBon
100 10 0 VCE / V
LB T.U.T.
-VBB
min VCEOsust
Fig.2. Oscilloscope display for VCEOsust.
Fig.5. Test circuit inductive load. VCC = 300 V; -VBE = 5 V, LC = 200 uH; LB = 1 uH
VCC
ICon 90 % IC
RL VIM 0 tp
IB
RB T.U.T.
ts toff IBon
10 % tf t
T
-IBoff
t
Fig.3. Test circuit resistive load. VIM = -6 to +8 V VCC = 250 V; tp = 20 s; = tp / T = 0.01. RB and RL calculated from ICon and IBon requirements.
Fig.6. Switching times waveforms with inductive load.
October 1999
3
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ103AU
120 110 100 90 80 70 60 50 40 30 20 10 0
PD%
Normalised Power Derating
VCEsat/V 2.0
1.6 IC=1A 1.2 2A 3A 4A
0.8
0.4
0
20
40
60
80 100 Tmb / C
120
140
0.0 0.01
0.10 IB/A
1.00
10.00
Fig.7. Normalised power dissipation. PD% = 100PD/PD 25C = f (Tmb)
HFE 50
Fig.10. Collector-Emitter saturation voltage. Solid lines = typ values, VCEsat = f(IB); Tj=25C
VBEsat/V 1.4
25C
30
100C
20 15
1.2
IC/IB = 4
-40C
10
1
25C -40C
5
0.8
VCE = 1V
2
0.6
100C
0.2 0.3 0.5 1 IC/A 2 3 5 10
0.01
0.05
0.1 IC/A
0.5
1
2
3
5
10
0.1
Fig.8. Typical DC current gain. hFE = f(IC) parameter VCE
HFE 50
Fig.11. Base-Emitter saturation voltage. Solid lines = typ values, VBEsat = f(IC).
VCEsat/V 0.8
25C
30
100C
20 15
0.6
-40C
IC/IB = 4
10
100C
0.4
5
25C
VCE = 5V
0.2
2
-40C
0
0.01
0.05
0.1 IC/A
0.5
1
2
3
5
10
0.5 IC/A
2
5
Fig.9. Typical DC current gain. hFE = f(IC) parameter VCE
Fig.12. Collector-Emitter saturation voltage. Solid lines = typ values, VCEsat = f(IC).
October 1999
4
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ103AU
10
Zth j-mb / (K/W)
VCC
D= 0.5 0.2 0.1 0.05 0.1 0.02 0 T 0.01 10us 1ms t/s 0.1s 10ms t
1
LC
VCL(RBSOAR)
IBon
P D tp D= tp T
PROBE POINT LB T.U.T.
-VBB
Fig.13. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T
Fig.16. Test Circuit for reverse bias safe operating area. Vcl 700V; Vcc = 150V; VBB = -5V; LB = 1H; Lc = 200H
ton/toff (ns) 10,000
toff
5,000 100C 3,000 2,000
IC (A)
9
8
1,000
500
ton
300 200
25C
7
VBE=-5V
IC/IB = 5
100 1 2 3 IC/A 4 5 6
6
Fig.14. Resistive Switching. ton,toff = f(IC).
5
4
tfi/tsi (ns) 5,000
100C
2,000 1,000 500
tsi
3
25C
IC/IB = 5
200 100 50
2
tfi
1
20 10 1 2 3 IC/A 4 5 6
0 0 100 200 300 400 500 600 700 800 900
Fig.15. Inductive switching. ton, toff = f(IC)
VCEclamp (V) Fig.17. Reverse bias safe operating area Tj Tjmax
October 1999
5
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ103AU
IC (A)
100
Duty Cycle = 0.01
Icm max
10
tp =
Ic max
(1)
II
20us
50us 1 100us 200us
(2)
0.1
500us DC
I
III
0.01
0.001 1 10 100 1,000
VCEclamp (V)
Fig.18. Forward bias safe operating area. Ths 25 C (1) (2) I II III NB: Ptot max and Ptot peak max lines. Second breakdown limits. Region of permissible DC operation. Extension for repetitive pulse operation. Extension during turn-on in single transistor converters provided that RBE 100 and tp 0.6 s. Mounted with heatsink compound and 30 5 newton force on the centre of the envelope.
October 1999
6
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ103AU
MECHANICAL DATA
Plastic single-ended package (Philips version of I-PAK); 3 leads (in-line) SOT533
E E1 D1 mounting base D A1
A
Q
L
1 e1 e
2 b
3 wM c
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 2.38 2.22 A1 0.89 0.71 b c D 7.28 6.94 D1 1.06 0.96 E 6.73 6.47 E1 5.36 5.26 e e1 L 9.8 9.4 Q 1.00 1.10
0.89 0.56 0.71 0.46
4.57 2.285
OUTLINE VERSION SOT533
REFERENCES IEC JEDEC TO-251 EIAJ
EUROPEAN PROJECTION
ISSUE DATE 99-02-18
Fig.19. SOT533 surface mounting package. Pin 2 connected to mounting base.
October 1999
7
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ103AU
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1999 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
October 1999
8
Rev 1.100

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